preliminary preliminary maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 40 v average forward current i o 5.0 a peak forward surge current (tp1ms) i fsm tbd a power dissipation p d 4.5 w (note 1) power dissipation p d 4.0 w (note 2) power dissipation p d 2.5 w (note 3) operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 27.78 c/w (note 1) thermal resistance ja 31.25 c/w (note 2) thermal resistance ja 50.00 c/w (note 3) electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =20v 15 150 a i r v r =40v 25 200 a bv r i r =0.4ma 40 v v f i f =1.0a 0.35 v v f i f =2.0a 0.41 v v f i f =3.0a 0.45 v v f i f =4.0a 0.48 v v f i f =5.0a 0.49 0.52 v CTLSH5-40M833 surface mount low v f silicon schottky rectifier tiny leadless module tm tlm833 case central semiconductor corp. tm r1 (27-april 2006) description: the central semiconductor CTLSH5-40M833 is a high performance 5.0 amp schottky rectifier designed for applications where small size and operational efficiency are prime requirements. with a maximum power dissipation of 4.5w, this leadless package design has a watts per unit area at least twice that of equivalent package devices. features: ? high current (i f =5.0a) ? high termal efficiency ? low leakage/low v f ? 3 x 3mm tlm? case notes: (1) ceramic or aluminum core pc board with copper mounting pad area of 75 mm 2 (2) fr-4 epoxy pc board with copper mounting pad area of 75 mm 2 (3) fr-4 epoxy pc board with copper mounting pad area of 25 mm 2 marking code: cha2 top view bottom view
preliminary central semiconductor corp. tm tlm833 case - mechanical outline CTLSH5-40M833 surface mount low v f silicon schottky rectifier tiny leadless module tm r1 (27-april 2006) lead code: 1) anode 2) anode 3) anode 4) anode 5) cathode 6) cathode 7) cathode 8) cathode marking code: cha2 optional mounting pad for standard mounting refer to tlm833 package details
|
